Microcrystalline silicon growth for heterojunction solar cells. Second quarterly report, 1 April 1983-30 June 1983

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In this reporting period, a single source of evaporation with B mixed with highly doped Si was used instead of the co-evaporation of separate Si and B sources. The purpose was to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, were similar to last quarter when evaporation was used. The best Voc of the heterojunction was about 460mV and no improvement in Voc in the heteroface structure, was observed; slight Voc degradation occurred. A study of the p m-Si/p c-Si structure showed a negative Voc in many cases. The highest /sup 0/C voltage was … continued below

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35 pages

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Iles, P. A.; Leung, D. C. & Fang, P. H. January 1, 1983.

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In this reporting period, a single source of evaporation with B mixed with highly doped Si was used instead of the co-evaporation of separate Si and B sources. The purpose was to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, were similar to last quarter when evaporation was used. The best Voc of the heterojunction was about 460mV and no improvement in Voc in the heteroface structure, was observed; slight Voc degradation occurred. A study of the p m-Si/p c-Si structure showed a negative Voc in many cases. The highest /sup 0/C voltage was up to -150mV. This indicated that the interface properties between the two materials are such that instead of repelling minority carriers from the substrate carrier, collection actually occurred. This structure defeated the purpose, but it might also mean that n-type m-Si could be beneficial and should be included in future study. Another study of cells made in the part of substrates not covered by m-Si resulted in performance lower than the controls. This indicated possible substrate degradation in the process, the extent of which will be studied in the future.

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35 pages

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NTIS, PC A03/MF A01; 1.

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  • January 1, 1983

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Iles, P. A.; Leung, D. C. & Fang, P. H. Microcrystalline silicon growth for heterojunction solar cells. Second quarterly report, 1 April 1983-30 June 1983, report, January 1, 1983; United States. (https://texashistory.unt.edu/ark:/67531/metadc1055768/: accessed May 4, 2024), University of North Texas Libraries, The Portal to Texas History, https://texashistory.unt.edu; crediting UNT Libraries Government Documents Department.

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